Abstract
A photodetector is provided with a thin film double layer heterostructure. The photodetector is comprised of: a substrate; a channel layer of a transistor deposited onto a top surface of the substrate; a source layer of the transistor deposited on the top surface of the substrate; a drain layer of the transistor deposited on the top surface of the substrate, the source layer and the drain layer disposed on opposing sides of the channel layer; a barrier layer deposited onto the channel layer; and a light absorbing layer deposited on the barrier layer. The light absorbing layer is configured to absorb light and, in response to light incident on the light absorbing layer, electrical conductance of the channel layer is changed through hot carrier tunneling from the light absorbing layer to the channel layer.