摘要
A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2):
Zr12O8(OH)14(RCO2)18 Formula (A1);
or
Hf6O4(OH)6(RCO2)10 Formula (A2).
R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6):
The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.