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Piezoelectric Gate-Induced Strain
Patent

Piezoelectric Gate-Induced Strain

Taiwan Semiconductor Manufacturing Company, Ltd., 黃敬源, Chan, Chien-Tai, Wu, Chung-Cheng and Lin, Da-Wen
13/10/2011

Abstract

An embodiment is a semiconductor device. The semiconductor device comprises a substrate, an electrode over the substrate, and a piezoelectric layer disposed between the substrate and the electrode. The piezoelectric layer causes a strain in the substrate when an electric field is generated by the electrode.

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