A fabricating method of a resistive random access memory unit with one-way conduction characteristic includes performing an initializing step, a forming step and a reverse resetting step. The initializing step includes providing the resistive random access memory unit. The forming step includes applying a setting voltage on a lower metal layer, and coupling an upper metal layer to a ground voltage to transform the resistive random access memory unit to a low resistive state. The reverse resetting step includes coupling the lower metal layer to the ground voltage and applying a resetting voltage to the upper metal layer to transform the resistive random access memory unit to a one-way conduction state. A forward reading current is greater than a reverse reading current, and the forward reading current is less than 3000 times of the reverse reading current.
- Resistive Random Access Memory Unit With One-Way Conduction Characteristic And Fabricating Method Thereof
- 具單向導通特性的可變電阻式記憶單元及其製造方法
- National Tsing Hua University (Patent applicant)Ya-Chin King (Inventor) - National Tsing Hua University, College of Semiconductor ResearchChrong-Jung Lin (Inventor) - National Tsing Hua University, College of Semiconductor ResearchYu-Cheng Lin (Inventor)Yao-Hung Huang (Inventor)
- USA
- Patent
- US 12,431,194 B2
- 18/414,880
- 17/01/2024
- 23/01/2025
- 30/09/2025
- English
- 優先權TW 112127445 20230721