A method includes forming a second semiconductor layer over a first semiconductor layer; performing a first etching process to form a recess in the second semiconductor layer, such that the second semiconductor layer includes a bottom portion and a top portion over the bottom portion, wherein the first etching process results in forming first dielectric layers on opposite sidewalls of the top portion; performing a second etching process to narrow the bottom portion of the second semiconductor layer; performing a third etching process to remove the bottom portion of the second semiconductor layer; performing a fourth etching process to narrow the first semiconductor layer; and forming a first gate structure over the first semiconductor layer and a second gate structure over the second semiconductor layer, respectively.
- SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Yung-Chun WuFu-Ju HouYi-Wen LinShan-Wen Lin
- Patent
- US 2025/0301784 A1
- 18/611,610
- 03/2024
- Chinese