Abstract
A Schottky barrier diode includes a substrate, a buffer layer formed on the substrate, an upper layer formed on the buffer layer, a first electrode layer formed on the upper layer as an anode of the Schottky barrier diode, a second electrode layer formed on the upper layer as a cathode of the Schottky barrier diode, and a first n-type doping region formed in the upper layer and under the first electrode layer, and contacting the first electrode layer. An edge of the first n-type doping region and an edge of the first electrode layer are separated by a first predetermined distance at a first direction at which the first electrode layer faces the second electrode layer.