Abstract
The present disclosure provides a high electron mobility transistor (HEMT). The HEMT includes a substrate, a buffer layer, a channel layer, a barrier layer, a source, a drain, and a gate. The substrate, the buffer layer, the channel layer, the barrier layer, the source, the drain, and the gate are stacked in sequence in a thickness direction of the HEMT. The barrier layer includes a first doped semiconductor structure, and the channel layer includes a second doped semiconductor structure. The present disclosure further provides a method for manufacturing an HEMT. The HEMT has features such as low drain electric field intensity, a high breakdown voltage, high stability, and low costs.