Abstract
The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a nitride semiconductor layer disposed on the substrate, a first gate stack in contact with the nitride semiconductor layer, and a resistor laterally spaced apart from the first gate stack and electrically connected to first gate stack. The resistor comprises a first conductive terminal in contact with the nitride semiconductor layer, a second conductive terminal in contact with the nitride semiconductor layer; a first doped region of the nitride semiconductor layer between the first conductive terminal and the second conductive terminal; and a first conductive region of the nitride semiconductor layer in contact with the first conductive terminal and the second conductive terminal.