摘要
A manufacturing method of a semiconductor device includes forming a van der Waals structure between a metal and a semiconductor. The method further includes: depositing a protective layer on a two-dimensional semiconductor layer, then patterning the protective layer and the two-dimensional semiconductor layer, forming a first electrode and a second electrode on the protective layer, and removing the protective layer completely, thereby forming a van der Waals contact structure between the first electrode and the semiconductor layer and between the second electrode and the semiconductor layer.