Semiconductor Structure With Trench Junction Barrier Schottky (TJBS) Diode

National Tsing Hua University; 黃智方; Jan, Yong-Shiang; Hu, Jia-Wei; Lin, You-An

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Semiconductor Structure With Trench Junction Barrier Schottky (TJBS) Diode

National Tsing Hua University, 黃智方, Jan, Yong-Shiang, Hu, Jia-Wei and Lin, You-An

23/06/2022

Abstract

A semiconductor device includes: a U-metal-oxide-semiconductor field-effect transistor (UMOS) structure; and a trench junction barrier Schottky (TJBS) diode, wherein an insulating layer of a sidewall of the TJBS diode does not have a side gate.

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Title: Semiconductor Structure With Trench Junction Barrier Schottky (TJBS) Diode
Translated title: 具有溝槽式接面蕭基位障二極體的半導體結構
Creators: National Tsing Hua University (Applicant)
黃智方 (Inventor)
Jan, Yong-Shiang (Inventor)
Hu, Jia-Wei (Inventor)
Lin, You-An (Inventor)
Note: 優先權TW 109144788 20201217
Language: Traditional Chinese
Resource Type: Patent
Patent: US 11,810,974 B2; US 11,810,974 B2
Application code: USA
Application number: 17/358,693
Date application: 25/06/2021
Date published: 23/06/2022
Date issued: 07/11/2023

Semiconductor Structure With Trench Junction Barrier Schottky (TJBS) Diode

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