Abstract
A sensing margin expanding scheme for a memory and a method therefor is disclosed. A first terminal of a first capacitor is coupled to a bit line. A first terminal of a second capacitor is coupled to a reference voltage. In a first phase, the controller controls a first common switch and a second common switch to store the voltage difference between the bit line and the reference voltage to the first capacitor and the second capacitor. In a second phase, controlling the first common switch and the second common switch to open the first terminal of the first capacitor and the second terminal of the second capacitor and open the second terminal of the first capacitor and the first terminal of the second capacitor, and then coupling the second terminal of the first capacitor and the second terminal of the second capacitor to a common voltage.