Abstract
An SOT-MRAM comprises a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer. The magnetic free layer includes a first metal film exhibiting ferromagnetic characteristics, and a second metal film for generating a spin-Hall effect. The first metal film has a thickness sufficient to allow the magnetic free layer, after being applied with a first external magnetic field which is subsequently removed, to have a magnetization ratio ranging from -0.9 to 0.9. The first metal film, upon being applied with a second external magnetic field and an electric pulse, has multiple magnetic domains when a current density resulting from the electric pulse is greater than a critical value.