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データ保存構造を有する半導体構造,および,その製造方法
Patent

データ保存構造を有する半導体構造,および,その製造方法

台湾積體電路製造股▲ふん▼有限公司, 張宗生, 林崇榮, 蕭婉, 陳皇魁 and 金雅琴
18/08/2016

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor structure having a data storage structure and diversified functions, and a method of manufacturing the same.SOLUTION: A semiconductor structure comprises a substrate 102 and a gate structure 104 formed on the substrate. The semiconductor structure also comprises: a first source/drain structure 116 and a second source/drain structure 118 formed in the substrate adjacent to the gate structure; an interlayer insulation layer 120 which is formed on the substrate and covers the gate structure, the first source/drain structure and the second source/drain structure; and a first conductive structure 128 which is formed in the interlayer insulation layer on the first source/drain structure and a second conductive structure 130 which is formed in the interlayer insulation layer on the second source/drain structure. The first conductive structure directly contacts the first source/drain structure. The second conductive structure does not directly contact the second source/drain structure.

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