Abstract
This invention relates to a fabrication process of heterogeneous growth of SiC film on silicon substrate, which grows cubic silicon carbide (3C-SiC) thin film on the P-type (100) silicon substrate by radio frequency induction heating chemical vapor deposition process. The fabrication process is a continuous temperature rising process, which eliminates the repeated temperature rising and lowering steps in general SiC fabrication process; this will reduce the fabrication time greatly. By using this fabrication process, it is capable of eliminating the voids in the interface of SiC thin film and silicon, and can effectively increase the crystallinity of the film. The four-stage continuous temperature rising process is suitable for industries to develop high quality SiC thin film.