Abstract
A self-aligned field-effect transistor is provided. The self-aligned field-effect transistor includes a substrate, a dielectric layer, conductive electrodes and carbon nanotubes. A patterned back-gated conductive electrode can be disposed in the substrate. The dielectric layer is disposed on the substrate. The patterned conductive electrodes are disposed on the dielectric layer and perform as the source/drain pairs. The patterned conductive electrodes contain silicide such as cobalt silicide as a catalyst for carbon nanotube synthesis. The carbon nanotube is disposed on the dielectric layer to electrically connect with the patterned electrodes.