Abstract
The amorphous silicon/amorphous silicon gemanium NI1PI2N position detectors were fabricated to suppress the visible light and increase the detection of the infrared light. The material of I1 layer is amorphous silicon or amorphous silicon gemanium which is used as the absorption region of visible light. The material of I2 layer is amorphous silicon gemanium or amorphous gemanium which is used as the absorption region of infrared light. The suppression of signal due to the absorption of the visible light and increase the signal due to absorption of the infrared light can be obtained as the NI1P diode is under forward bias and the PI2N diode is under reverse bias. The optical band gap of Il and I2 layer can be controlled by the Si/Ge atomic ratio. The suppression of visible light and increasing the detection of infrared light can be tuned by the thickness and the optical band gaps of I1 and I2 layers. The amorphous silicon and amorphous silicon germane layers were deposited by the square-wave modulation of 13.56 MHz RF power.