Abstract
The invention relates a differential sensing and silicon crystal perforating hole time sequence control structure of a three-dimensional chip, comprising a first chip layer of a stack component , wherein the first chip layer includes a detection circuit and a relative high-capacity driver which is horizontally coupled to the detection circuit, a sensing circuit which is coupled to the detection circuit via a horizontal lead, a first differential signal driver which is horizontally coupled to the sensing circuit in a first chip layer, and an Nth chip layer of the stack component , wherein the Nth chip layer includes an Nth relative high-capacity driver and an Nth differential signal driver formed on the Nth chip layer, wherein the Nth relative high-capacity driver penetrates a vertical relative low-load silicon crystal perforating hole and (N-2) relative high-load silicon crystal perforating holes as virtual loads to be vertically coupled to a first relative high-capacity driver, and the Nth differential signal driver penetrates a pair of relative low-load silicon crystal perforating holes and (N-2) pairs of relative high-load silicon crystal perforating holes to be vertically coupled to the first differential signal driver.