Abstract
A mid-infrared light emitting diode including a graphene lower electrode layer, a black phosphor layer, and a graphene upper electrode layer sequentially arranged along a thickness direction of the mid-infrared light emitting diode, wherein the black phosphor layer contacts the graphene lower electrode layer and the graphene upper electrode layer. A manufacturing method of the mid-infrared light emitting diode, a silicon photonic circuit and a manufacturing method thereof are also provided.