Abstract
Disclosed is a method for printing a mask on the surface of a silicon substrate and for etching subsequently a plurality of grooves on said substrate, without employing photolithography, laser scribing and mechanical scribing. Said mask serves to protect the silicon area underneath barrier from being etched by an etchant, while the silicon area uncovered by barrier is accordingly etched and thus leading to a pattern of grooves. The mask can also be an interim mask, being removed after a new material is deposited upon it. The new material forms a new mask with a pattern complementary to said original one, and plays a role similar to said original one. The invention also covers a silicon wafer-based solar cell with buried contacts formed by said disclosed technique. Compared with current groove-forming techniques, disclosed method is more simpler and can provide larger throughput.