Abstract
This invention provides a manufacturing method to improve the dielectric characteristics of nano-porous silicon dioxide film by using amorphous hydrogen-containing silicon carbide film. This method integrates a sintering process of an ultra-low dielectric constant nano-porous silicon dioxide film, a hydrophobic modification process and an etching stop layer process, which employs the amorphous hydrogen-containing silicon carbide film as the etching stop layer in the dual damascene process and coats a precursor solution of the ultra-low dielectric constant nano-porous silicon dioxide film containing template polymer thereon. During performing the sintering process, the film pore hydrophobic modification process will be executed concurrently.