Abstract
A low voltage one-time-programmable memory is proposed. The low voltage one-time-programmable memory includes a first conductive layer, a first via, a second conductive layer, a select transistor, a second via and a third conductive layer. The first via is electrically connected to the first conductive layer. The second conductive layer is electrically connected to the first via. The select transistor is electrically connected to the second conductive layer. The second via is electrically connected to the second conductive layer. The third conductive layer is electrically connected to the second via. A first current passed by the second via is a sum of a second current passed by the first via and a third current passed by the select transistor. Therefore, the low voltage one-time-programmable memory of the present disclosure removes the high-voltage input/output transistor of the conventional one-time-programmable memory, and programs the low-voltage core transistor by a low voltage.