Abstract
A low static current semiconductor device is provided; the semiconductor device includes a power transistor and a driving circuit. The driving circuit is coupled to and is configured to drive the power transistor and includes first and second stages. The second stage is coupled between the first stage and the power transistor. Each of the first and second stages includes a pair of enhancement-modehigh-electron-mobility transistors (HEMTs). The construction as such lowers a static current of the driving circuit.