Abstract
A process method for a separation grating flash memory element by source channel includes: forming a grating oxidation layer on a semiconductore ground with a floating grating pile, forming an interdielectric layer on the grating oxidation layer and outer surface of the said floating grating pile, processing control grating on the surface of the said inter-dielectric layer at the flange of the pile sidewall, entering into the first ionic implantation to form a drain zone on the ground adjacent to the pile, and photoresist with graph exposing the being doped source zone surface to be etched toform a channel structure; a second ionic implantation is taken to form source doping to eliminate the photoresist and processing in heat amealing to form oxidation layer on the source channel surface.