Abstract
A process method for a carbon nanotube of interconnection is disclosed, which is used to solve the problems of the electron migration resistance and the RC delay effect between the metal-wire connections in the field of semiconductor. The process method of the present invention is mainly to dispose a catalyst layer comprising a catalysis layer and an upper cover layer onto the port circumference of a substrate, and then make the carbon nanotube grow on the catalysis layer, wherein the upper cover layer is covered on the carbon nanotube. The advantage of the present invention lies in the fact that through the catalyst layer, the carbon nanotube can be made to grow between the catalysis layer and the upper cover layer. Moreover, because of the protection of the upper cover layer, the oxidation of the catalysis layer can be avoided to be advantageous to the growth of carbon nanotube. On the other hand, the carbon nanotube can be connected separately with the lower-layer substrate and the upper-layer conductive wire through the catalysis layer and the upper cover layer, thereby having the property of relatively lower contact resistance value. Furthermore, by means of the catalyst layer to be used as the barrier layer of metal, the disclosed method can avoid the metal from spreading into the other material by means of diffusion or other ways.