Abstract
An interconnection structure is provided. The interconnection structure includes a substrate, an interfacial metal layer, a dielectric layer and a carbon-based wiring or via structure. The interfacial layer is patterned on the substrate and contains iron, cobalt, or nickel that can catalyze the growth of conductive carbon-based material such as carbon nanotube or carbon nanofiber for wiring or via structure. The dielectric layer, which is composed of an insulating amorphous carbon or other low-k carbon-based material, is disposed on the substrate. The carbon-based wiring or via structure composed of carbon nanotube or carbon nanofiber is disposed inside the dielectric the dielectric layer to electrically connect with the interfacial metal layer. An interconnection manufacturing method is provided. The insulating amorphous carbon amorphous carbon or other low-k carbon-based material, which is above the patterned interfacial layer, is transferred to conductive carbon nanotube or carbon nanofiber by laser direct writing method. Consequently, a self-aligned carbon-based conducting wiring or via structure is formed. This invention can improve interconnection reliability, with the advantages of providing a self-aligned, simplified, and low-cost interconnect.