Abstract
An interconnection structure is provided. The interconnection structure includes a substrate, a conductive barrier layer, a dielectric layer and a carbon nanotube. A conductive region is disposed in the substrate. The conductive barrier layer is disposed on the conductive region and the conductive barrier layer contains iron, cobalt or nickel. The dielectric layer is disposed on the substrate. The carbon nanotube is disposed in the dielectric layer to electrically connect with the conductive barrier layer.