Abstract
A method is provided to integrate all active and passive integrated optical devices on a silicon-based integrated circuit (IC). A silicon-based substrate is used for integrating the devices instead of a silicon-on-insulator (SOI) substrate. Therefore, cost is down and heat dissipation efficiency is enhanced. Besides, rapid melt growth (RMG) is used for solving problems about integrating the electric circuit and the optical devices. The present invention can be used to develop a forward-looking optical transceivers on a standard wafer; or, to fully and compatibly integrate all devices to a circuit on an optical communication chip.