本發明提供一種具單向導通特性的可變電阻式記憶單元的製造方法，包含初始步驟、形成步驟及反向重置步驟。初始步驟係提供可變電阻式記憶單元。可變電阻式記憶單元包含上層金屬層、通孔及下層金屬層，上層金屬層連接通孔，且下層金屬層與通孔之間具有間隙。形成步驟係對下層金屬層施加設定電壓，並將上層金屬層耦接接地電位，使可變電阻式記憶單元由高電阻狀態轉換為低電阻狀態。反向重置步驟係將下層金屬層耦接接地電位，並對上層金屬層施加重置電壓，使可變電阻式記憶單元變為單向導通狀態。藉此，透過單一方向進行讀取及寫入操作。
A fabricating method of a resistive random access memory unit with one-way conduction characteristic is proposed. The fabricating method of the resistive random access memory unit with one-way conduction characteristic includes performing an initializing step, a forming step and a reverse resetting step. The initializing step is performed to provide the resistive random access memory unit. The resistive random access memory unit includes an upper metal layer, a via and a lower metal layer. The upper metal layer is connected to the via, and a gap is between the lower metal layer and the via. The forming step is performed to apply a setting voltage on the lower metal layer, and the upper metal layer is coupled to a ground voltage. The resistive random access memory unit transforms to a low resistive state from a high resistive state. The reverse resetting step is performed to couple the lower metal layer to the ground voltage, and apply a resetting voltage to the upper metal layer. The resistive random access memory unit transforms to a one-way conduction state from the low resistive state. Thus, the fabricating method of the resistive random access memory unit with one-way conduction characteristic of the present disclosure can read and write in one direction.
- 具單向導通特性的可變電阻式記憶單元及其製造方法
- Resistive Random Access Memory Unit With One-Way Conduction Characteristic And Fabricating Method Thereof
- 國立清華大學 (Patent applicant)Ya-Chin King (Inventor) - National Tsing Hua University, College of Semiconductor ResearchChrong-Jung Lin - National Tsing Hua University, College of Semiconductor Research林昱丞 (Inventor)黃耀弘 (Inventor)
- TWN
- Patent
- I851350
- 112127445
- 21/07/2023
- 01/02/2025
- 01/08/2024
- Traditional Chinese