Abstract
A field-effect transistor (FET) includes an extra gate on the shallow trench isolation (STI) for enhancing and adapting the low-frequency noise caused by the STI-silicon interface. Through adjusting the voltage of the STI gate, the low-frequency noise which can be adapted by the FET is more than ten thousand times. This FET is compatible with the standard complementary metal oxide semiconductor (CMOS) logic manufacturing process, and has no need to add extra masks and change the manufacturing process.