Abstract
The invention provides an MEMS device having low expansion factor difference. The device is manufactured by adopting a complementary metal oxide semiconductor process, and comprises a fixed unit, a movable unit, and a connecting structure. The fixed unit comprises a first capacitive sensing area and a fixed structure area. The movable unit comprises a second capacitive sensing area and a mass block area, the first capacitive sensing area can form a capacitor together with the second capacitive sensing area, and the mass block area is of a single-material structure. The connecting structure is used for connecting and fixing the movable unit, and allows the movable unit to move relative to the fixed unit.