本发明提供了一种具有双晶界的半导体器件结构及其形成方法。半导体器件结构包括衬底和在衬底上方形成的导电结构。导电结构包括双晶界，并且双晶界的密度在约25μm‑1至约250μm‑1的范围中。
A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25[mu]m-1 to about 250[mu]m-1.
- 具有双晶界的互连结构及其形成方法
- Interconnect Structure With Twin Boundaries And Method For Forming Same
- 台湾积体电路制造股份有限公司 (Patent applicant)建宏 林 (Inventor)垂青 邱 (Inventor)永辉 李 (Inventor)Chien-Neng Liao - National Tsing Hua University, College of Semiconductor Research郁伦 阙 (Inventor)宗晟 詹 (Inventor)俊龙 黄 (Inventor)
- CHN
- Patent
- CN 106469677 B
- 201610674152.9