Abstract
A horizontal type semiconductor element having a vertical cross-over structure electrode comprises a substrate, an insulation buffer layer, an epitaxy unit, a first electrode and a second electrode. The substrate has conductivity, comprising a first surface. The insulation buffer layer is disposed on the first surface of the substrate. The epitaxy unit is disposed on the insulation buffer layer. The first electrode is disposed on the epitaxy unit. The second electrode comprises a first electrode portion spaced from the first electrode and located on the epitaxy unit, and a second electrode portion extended from the first electrode portion to be in contact with the first surface of the substrate.