Abstract
The invention discloses a horizontal type semiconductor element with a vertical type bridging structure electrode. The semiconductor element comprises a substrate, an insulating buffer layer, an epitaxial cell, a first electrode, and a second electrode. The substrate having conductivity comprises a first surface disposed on the first surface of the substrate, the epitaxial cell is disposed on the insulating buffer layer, the first electrode is disposed on the epitaxial cell, the second electrode includes a first electrode portion and a second electrode portion, the first electrode portion is disposed at a distance between the first electrode and located on the epitaxial cell, and the second electrode portion is extending from the first electrode portion so as to be in contact with the first surface of the substrate. The second electrode portion is extended to the first surface so that the two electrodes of the horizontal type semiconductor element are located on opposite sides of the substrate to reduce the use of the area of the element.