Abstract
A semiconductor device and a manufacturing method therefor. The semiconductor device comprises a semiconductor heterostructure layer (110) and a conductive structure (130). The semiconductor heterostructure layer (110) comprises alternate first semiconductor material layers (111) and second semiconductor material layers (112), wherein two-dimensional hole gas (2DHG) can be generated between each adjacent first semiconductor material layer (111) and second semiconductor material layer (112). The conductive structure (130) comprises a plurality of conductive fingers (131, 132, 133) which extend from the surface of the semiconductor heterostructure layer (110) into the semiconductor heterostructure layer (110), wherein the plurality of conductive fingers (131, 132, 133) are arranged along a first direction which is substantially parallel with the surface, and the length of the plurality of conductive fingers (131, 132, 133) increases incrementally along the first direction, such that the ends (131E, 132E, 133E) of the respective conductive fingers (131, 132, 133) are positioned in the second semiconductor material layers (112) at different depths and do not contact the two-dimensional hole gas (2DHG).