Abstract
Some embodiments of the present disclosure provide a semiconductor device and a method of manufacturing the same. The semiconductor device includes a semiconductor heterostructure layer and a conductive structure. The semiconductor heterostructure layer comprises first semiconductor material layers and second semiconductor material layers, the first semiconductor material layers and the second semiconductor material layers are arranged alternately, and two-dimensional electron gas (2DEG) can be generated between each first semiconductor material layer and the corresponding second semiconductormaterial layer which are adjacent to each other. The conductive structure comprises a plurality of conductive fingers which extend into the semiconductor heterostructure layer from the surface of thesemiconductor heterostructure layer, wherein the plurality of conductive fingers are arranged along a first direction substantially parallel to the surface, and the lengths of the plurality of conductive fingers are progressively increased along the first direction, so that the end parts of the conductive fingers are positioned on the second semiconductor material layers with different depths respectively and are not in contact with the 2DEG.