Abstract
The invention discloses a semiconductor device having a multi-channel hetero-structure and a method of manufacturing the same. The semiconductor device comprises a semiconductor hetero-structure layerand a conductive structure. The hetero-structure comprises first semiconductor material layers and second semiconductor material layers, which are arranged in an alternative mode. A two dimensional hole gas (2DHG) is generated between each first semiconductor material layer and a neighbored semiconductor material layer. The conductive structure comprises a plurality of conductive fingers that extend into the semiconductor hetero-structure layer from the surface of the semiconductor hetero-structure layer. The conductive fingers are arranged in a first direction that is substantially parallelto the surface. The lengths of the conductive fingers increase in the first direction, and thus the ends of all conductive fingers are positioned at different first semiconductor material layers and make contact with 2DHG.