Abstract
A light emitting diode structure with multiple light emission layer includes a substrate having smooth surface, a first doped GAN layer on the top of the substrate with smooth surface, a first emission layer on the first doped GaN layer, a second emission layer on the fist emission layer, and a second doped GaN layer on the second emission layer. The second emission layer is an emission layer of yellow color. When the electron and electric hole injected into the light emitting diode structure through the forward voltage (Vf), the first emission layer would be generated the blue color and the yellow color, such that the yellow light and the blue light can be mixed to generate the white light.