Abstract
The invention provides a semiconductor structure with a trench junction barrier Schottky diode. The semiconductor structure comprises a trench gate power metal oxide semiconductor field effect response transistor structure; and a trench junction barrier Schottky diode. A side grid electrode is not arranged in an insulating layer on the side wall of the trench junction barrier Schottky diode. The semiconductor structure with the trench junction barrier Schottky diode has the shortest current path, and the current path is perpendicular to the horizontal plane or the Schottky barrier.