Abstract
The invention discloses a structure and a manufacturing method of a Metal-Oxide-Semiconductor Field-Effect Transistor with an element of IVA group ion implantation. The element of IVA group ion implantation layer is disposed in the body, and the element of IVA group ion implantation layer is close to the interface between the gate oxide layer and the body; wherein the element of IVA group ion implantation layer is utilized to change a channel property.