Abstract
A pinned photodiode sensor with gate controlled SCR transfer switch includes a pinned photodiode and a gate controlled SCR transfer switch. The SCR transfer switch includes a P substrate, an N- doped region and an N+ doped region formed on the substrate, a P+ doped region formed on the N- doped region, an oxide layer formed on the P substrate, the N- doped region, the N+ doped region, and the P+ doped region, and a gate formed above the P substrate and the N- doped region. The gate includes a P+ doped region and an N+ doped region. During transfer and exposure procedure, a depletion region will not reach the interface between the oxide layer and the substrate, thereby preventing dark current leakage.