Abstract
The invention relates to a semiconductor device with an asymmetric gate structure. The semiconductor device comprises a substrate; a channel layer positioned above the substrate; a barrier layer overthe channel layer; a source electrode contact and a drain electrode contact which are positioned above the barrier layer; a doped III-V group layer over the barrier layer and between the drain contactand the source contact; and a gate electrode which is located above the doped III-V group layer and is configured to form a Schottky junction with the doped III-V group layer. The barrier layer and the channel layer are configured to form a two-dimensional electron gas, and the two-dimensional electron gas is formed in the channel layer along an interface between the channel layer and the barrierlayer; and the doped III-V group layer and/or the gate electrode have/has a non-centrosymmetric geometric structure, so that the device achieves an effect of controlling a gate leakage current distribution pattern in application.