Abstract
A thin film transistor device with nonvolatile memory function, which comprises a substrate and a plurality of thin film transistors set on the substrate. Each of the thin film transistor has an active film set in the substrate having a source portion, a drain portion and a plurality of the nanowire portion connecting the source portion and the drain portion, a gate dielectric film, a gate corresponding to the nanowire portions and stacked on the gate dielectric film, a passivation film covered the source portion, the drain portion and the gate having a plurality of holes connecting through the source portion, the drain portion and the gate, and a plurality of contact plugs fill in the holes, correspondingly. Each of the gate dielectric film has a tunneling oxide layer covered the nanowire portions, a blocking oxide layer formed on the tunneling oxide layer, and a trapping layer sandwiched between the tunneling oxide layer and the blocking oxide layer and made of nitride.