Abstract
The invention relates to a lateral field effect rectifier (L-FER) device which is compatible with a high-electron-mobility transistor and a method for forming the same. According to some embodiments, the rectifier is provided with an electron supplying layer which is arranged above a semiconductor material layer and is between an anode terminal and a cathode terminal. A doped III-N semiconductor material layer is disposed above the electron supplying layer. A passivation layer is above the electron supplying layer and the doped III-N semiconductor material layer. A grid structure is arranged above the doped III-N semiconductor material layer and the passivation layer. The doped III-N semiconductor material layer regulates a threshold value voltage of a rectifier, while the passivation layer improves reliability of the L-FER device through mitigating current deterioration caused by HTRB stress.