Abstract
This patent addresses the use of deformable micro structures as a post-processing method of improving matching conditions in integrated circuits. Descriptions include both that of passive and active component matching, where one or more devices are constructed on top of the deformable structure, and at least one device has the piezoresistive effect. This patent also covers the design of two circuits in a standard CMOS-MEMS process, where the active channels of one or more CMOS transistors is directly integrated atop a pressure-deformable silicon membrane: the first is a novel temperature- and process-insensitive CMOS-MEMS pressure-voltage transducer, and the second is a novel temperature and process-insensitive integrated microphone. Particular consideration is given to describing the necessary device orientation and placement on the silicon micro structure for improved, differential, functionality.