Abstract
The invention relates to a single-chip gyro device implemented by back-end semiconductor fabrication process, which includes a substrate, a plurality of metal layers, a plurality of dielectric layers and a plurality of vias. The metal layer is formed on the substrate. The dielectric layer is formed between the substrate and the bottom metal layer and any layer of the rest of dielectric layer is formed between the metal layers. The metal layers and the dielectric layers forms a mechanical structure. The vias are used to connect metal layers and are uncovered outside the dielectric layers so as to prevent the dielectric layers from being eroded and to form the metal side walls at the same time, forming a ring type mechanical structure with the metal layers and providing convenient etching process, better signal sensitivity and simple circuit design.