Abstract
This invention relates to a single-chip gyro device realized at the latter part of an IC including a base plate, multiple metal layers, multiple dielectric layers and multiple dielectric holes, in which, the metal layers are formed on the base plate, the bottom dielectric layer is formed between said base plate and the base metal layers, any rest dielectric layer is formed between the metal layers to form a mechanical structure layer with the metal layers, the dielectric layer holes are connected to the metal layers and bared out of the dielectric layers to prevent them to be etched and form a metal side wall and form a ring symmetric mechanical structure with the metal layers.