摘要
本發明提供一種生成石墨烯之方法，能將單層或多層石墨烯直接生成於介電材質上。此方法包括以下步驟：將一介電材質及一金屬設置於一反應器；通入一反應氣體至反應器，且反應氣體經加熱裂解；以及直接沈積一薄膜於介電材質之一表面上。其中，此方法所成長之石墨烯具有高品質低缺陷的特性，免除蝕刻與轉移的步驟，極具潛力整合於生醫、電子、光電元件之應用。
The invention discloses a method for synthesizing graphene films. Monolayer or multilayer graphene can be directly grown on the dielectric materials. The method includes the following steps: disposing dielectric materials and a metal in a reactor; introducing reaction gases into the reactor and heating to decompose the reaction gases; and depositing a film on the surface of the dielectric materials. High crystalline quality and low-defect graphene can be synthesized directly on dielectric materials, without the process of wet etching and transfer. The disclosed method opens up the route to apply graphene on electronics, optoelectronics, and bio-med devices.