Abstract
A semiconductor device includes a nitride semiconductor layer, a source electrode, a drain electrode, a grid electrode, first and second p-type doped nitride semiconductor layers, and a drain field plate. The source electrode, the drain electrode and the grid electrode are arranged on the nitride semiconductor layer. And the grid electrode is arranged between the source electrode and the drain electrode. The first p-type doped nitride semiconductor layer is arranged on the nitride semiconductor layer and located between the grid electrode and the drain electrode. The first p-type doped nitride semiconductor layer comprises a first p-type doped nitride semiconductor island, a second p-type doped nitride semiconductor island and a third p-type doped nitride semiconductor island which are separated. The second p-type doped nitride semiconductor island is located between the first p-type doped nitride semiconductor island and the third p-type doped nitride semiconductor island. Part of the drain electrode fill gaps among the first p-type doped nitride semiconductor island, the second p-type doped nitride semiconductor island and the third p-type doped nitride semiconductor island. The second p-type doped nitride semiconductor layer is located between the nitride semiconductor layer and the gate. The drain field plate is located right above the first p-type doped nitride semiconductor island, the second p-type doped nitride semiconductor island and the third p-type doped nitride semiconductor island.