Abstract
A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a first p-type doped nitride semiconductor layer, a gate structure, a source electrode, a drain electrode, and a second p-type doped nitride semiconductor layer. The second nitride semiconductor layer is provided on the first nitride semiconductor layer and has a band gap larger than that of the first nitride semiconductor layer. The first p-type doped nitride semiconductor layer is disposed between the second nitride semiconductor layer and the gate structure. The source electrode and the drain electrode are arranged on the second nitride semiconductor layer. The second p-type doped nitride semiconductor layer is arranged on the second nitride semiconductor layer, wherein the height from the drain electrode to the top surface of the second nitride semiconductor layer is larger than the height from the second p-type doped nitride semiconductor layer to the top surface of the second nitride semiconductor layer, the vertical projection of at least a part of the second p-type doped nitride semiconductor layer on the second nitride semiconductor layer falls within the vertical projection of the drain electrode on the second nitride semiconductor layer.