Abstract
The semiconductor device includes a first nitrogen-based semiconductor layer, a second nitrogen-based semiconductor layer, a pair of doped nitrogen-based semiconductor layers, and a first electrode. The second nitrogen-based semiconductor layer is disposed on the first nitrogen-based semiconductor layer. The first and second nitrogen-based semiconductor layers collectively have an active portion and an electrically insulating portion surrounding the active portion, and the electrically insulating portion has a pair of recesses to receive the active portion. A pair of doped nitrogen-based semiconductor layers is disposed on the second nitrogen-based semiconductor layer. The doped nitrogen-based semiconductor layers are separated from each other. The first electrode is disposed on the second nitrogen-based semiconductor layer and between the doped nitrogen-based semiconductor layers. Each doped nitrogen-based semiconductor layer has a first side surface and a second side surface opposite to each other, the first side surface faces the first electrode, and the second side surface is opposite to the first electrode. Along the normal direction of the second nitrogen-based semiconductor layer, the first side surface is aligned with the boundary of the recess, and the second side surface is separated from the boundary of the recess.